ULVAC Vietnam Representative Office

Single-substrate Plasma CVD Systems CMD Series

The CMD Series are single-substrate CVD systems for deposition of silicon oxide and nitride films using SiH4 or TEOS. A high-frequency (27.12 MHz) power supply enables high-quality film deposition.

Features

  • Improvements in the reaction chamber structure and gas supply system enable long-term stable deposition rates for TEOS(SiO2) films.
  • Unit drive systems can operate at higher temperatures than conventional process temperatures, and a new vacuum transfer robot has been developed to enable a stable transfer system.
  • Use of a high-frequency (27.12 MHz) power supply creates high-density plasma, for a high deposition rate.
  • Individual substrates can easily be managed using parameters such as deposition conditions.
  • A heated reaction gas path enables evacuation of all equipment (up to discharging unit) in gas state. Elimination of piping traps reduces by-product adhesion and maintenance time.

applications

  • Low-temperature P-Si, α-Si TFTs

specifications

 CMD- 450BHTCMD- 650HTCMD- 950
Substrate size (mm)400X 500 Xt0.7600 X 720 Xt0.7730X920 Xt0.7-0.5
Chamber configuration1) Loading/ unloading chambers222
2) Heating chambers111
3) Reaction chambers4 (3 if annealing chamber is mounted)4 (3 if annealing chamber is mounted)5 (4 if annealing chamber is mounted)
4) Transfer chambers1 (7-sided)1 (7-sided)1 (8-sided)
5) Evacuation system Loading/ unloading chamber Reaction chambersRotary + mechanical booster Dry + mechanical boosterRotary + mechanical booster Dry + mechanical boosterRotary + mechanical booster Dry + mechanical booster
6) Substrate transfer unitOptionOptionOption
Productivity65 seconds/ substrate (for single- layer 300 nm SiN film under standard ULVAC conditions)65 seconds/ substrate (for single- layer 300 nm SiN film under standard ULVAC conditions)75 seconds/ substrate (for single- layer 300 nm SiN film under standard ULVAC conditions)