Single-substrate Plasma CVD Systems CMD Series

Home / product / Vacuum Equipments / CVD System / Single-substrate Plasma CVD Systems CMD Series

Features

Improvements in the reaction chamber structure and gas supply system enable long-term stable deposition rates for TEOS(SiO₂) films.
Unit drive systems can operate at higher temperatures than conventional process temperatures, and a new vacuum transfer robot has been developed to enable a stable transfer system.
Use of a high-frequency (27.12 MHz) power supply creates high-density plasma, for a high deposition rate.
Individual substrates can easily be managed using parameters such as deposition conditions.
A heated reaction gas path enables evacuation of all equipment (up to discharging unit) in gas state. Elimination of piping traps reduces by-product adhesion and maintenance time.

		CMD- 450BHT	CMD- 650HT	CMD- 950
Substrate size (mm)		400X 500 Xt0.7	600 X 720 Xt0.7	730X920 Xt0.7-0.5
Chamber configuration	1) Loading/ unloading chambers	2	2	2
	2) Heating chambers	1	1	1
	3) Reaction chambers	4 (3 if annealing chamber is mounted)	4 (3 if annealing chamber is mounted)	5 (4 if annealing chamber is mounted)
	4) Transfer chambers	1 (7-sided)	1 (7-sided)	1 (8-sided)
	5) Evacuation system Loading/ unloading chamber Reaction chambers	Rotary + mechanical booster Dry + mechanical booster	Rotary + mechanical booster Dry + mechanical booster	Rotary + mechanical booster Dry + mechanical booster
	6) Substrate transfer unit	Option	Option	Option
Productivity		65 seconds/ substrate (for single- layer 300 nm SiN film under standard ULVAC conditions)	65 seconds/ substrate (for single- layer 300 nm SiN film under standard ULVAC conditions)	75 seconds/ substrate (for single- layer 300 nm SiN film under standard ULVAC conditions)