ULHITETM NE-7800H is the cluster type etching system of low-pressure and high-density plasma for NVM materials(difficult etch materials, used for FeRAM, MRAM, ReRAM, CBRAM, PCRAM etc.),dielectric, noble metals and Magnetic Layers.
Features
High-temperature (up to 450ºC) substrate electrode.
Mechanism for reducing deposition of dielectric film on RF input window
High etching rate
Outstanding stability of Pt/Ir/magnetic films etching
ISMTM (Inductively Super Magnetron) high-density plasma source.
applications
FeRAM, MRAM, ReRAM, CBRAM, PcRAM, etc.
specifications
Item
Specification
System configuration
Cassette chamber/auto-loader
Transfer chamber
Etching chamber
Preheating chamber (option)
Ashing chamber (option)
Supported substrate sizes
6/8 inches
Film types
Ferroelectric/high-k materials, magnetic materials, electrode materials, other