A Batch System to Remove Native Oxide RISETM-300

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Batch type equipment of chemical dry cleaning for remoral of native oxide in Narrow and Deep-contact patterns of advanced semiconductor.

Features

Damage-free (remote plasma and low-temperature process)
High throughput and low CoO
Processing in batches of fifty wafers
Superior uniformity of etching (5% or less per batch)
Easy maintenance
Small foot print compare to cluster type equipment
50% lower self-aligned contact resistance compared to current wet process
The Smallest foot print

applications

Pre-cleaning for self-aligned contact (SAC) formation
Pre-cleaning for capacitor formation
Pre-cleaning for epitaxial growth

specifications

Model		RISE^TM-300
Plasma Source		Microwave Power Supply
Configuration		EFEM + LL + PM
Wafer Size		300mm diameter
Wafer Stage		Ceramic Board (50 wafers/batch)
Pumping System		Etching Module:Mechanical booster pump +DRP
Control System		FAPC+TFT Touch Panel
Gas Supply		3 lines
Application		Pretreatment for SAC, Capacitor, Epitaxial growth