Item | Specification |
System configuration | Cassette chamber/auto-loader |
Transfer chamber |
Etching chamber |
Preheating chamber (option) |
Ashing chamber (option) |
Supported substrate sizes | 6/8 inches |
Film types | Ferroelectric/high-k materials, magnetic materials, electrode materials, other |
Uniformity within substrate surface | ±5% max. |
Plasma source | ISM (ICP with magnetic field) |
Substarate electrode temperature | Up to 400ºC±5ºC |
Anti-deposition measures | Faraday shield mechanism, Top plate heating mechanism, Deposition shield heating mechanism, etc |
Process recipe editing | Multi-step type |