| Item | Specification |
| System configuration | Cassette chamber/auto-loader |
| Transfer chamber |
| Etching chamber |
| Preheating chamber (option) |
| Ashing chamber (option) |
| Supported substrate sizes | 6/8 inches |
| Film types | Ferroelectric/high-k materials, magnetic materials, electrode materials, other |
| Uniformity within substrate surface | ±5% max. |
| Plasma source | ISM (ICP with magnetic field) |
| Substarate electrode temperature | Up to 400ºC±5ºC |
| Anti-deposition measures | Faraday shield mechanism, Top plate heating mechanism, Deposition shield heating mechanism, etc |
| Process recipe editing | Multi-step type |